GSJU8012
Part NoGSJU8012
ManufacturerGood-Ark Semiconductor
DescriptionMOSFET, N-CH, SINGLE, 12.00A, 80
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs420mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1130 pF @ 100 V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack
Grade-
Qualification-
In Stock:
1000
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.63 | |
| 10 | 1.597 | |
| 100 | 1.55 | |
| 1000 | 1.5 | |
| 10000 | 1.43 |
Associated Product
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