HY3810P
RoHS

HY3810P

Part NoHY3810P
ManufacturerHUAYI
Description-
Datasheet Download Now!
ECAD Module HY3810P
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)180A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.5mu03a9@10V,90A
Power Dissipation (Pd)346W
Gate Threshold Voltage (Vgs(th)@Id)4V@250u03bcA
TypeNu6c9fu9053
In Stock: 8189
Pricing
QTY UNIT PRICE EXT PRICE
1 0.532
10 0.521
100 0.51
1000 0.49
10000 0.47
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
NX138BKWX
NX138BKWX
Nexperia
MOSFET N-CH 60V 210MA SOT323
PSMN038-100HSX
PSMN038-100HSX
Nexperia
MOSFET 2N-CH 100V 21.4A LFPAK56D
STF34NM60ND
STF34NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A TO220FP
APT10026L2FLLG
APT10026L2FLLG
Microchip
MOSFET N-CH 1000V 38A 264 MAX
IRFF232
IRFF232
Harris
N-CHANNEL POWER MOSFET
DMN53D0LDW-7
DMN53D0LDW-7
Diodes Inc.
MOSFET 2N-CH 50V 0.36A SOT363
AM50N06-15D-CT
AM50N06-15D-CT
Analog Power Inc.
MOSFET N-CH 60V 51A TO-252 (D-Pa