HYG055N08NS1B
RoHS

HYG055N08NS1B

Part NoHYG055N08NS1B
ManufacturerHUAYI
Description80V 120A 5.3mΩ@10V,50A 187.5W 3V@250uA 15pF@25V N Channel 3.66nF@25V 60nC@10V -55℃~+175℃@(Tj) TO-263-2L MOSFETs ROHS
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ECAD Module HYG055N08NS1B
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Specification
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.3mu03a9@10V,50A
Power Dissipation (Pd)187.5W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)15pF@25V
TypeNu6c9fu9053
Input Capacitance (Ciss@Vds)3.66nF@25V
Total Gate Charge (Qg@Vgs)60nC@10V
Operating Temperature-55u2103~+175u2103@(Tj)
In Stock: 5085
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Shipping Information
Shiped FromShenZhen Warehourse
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