LSIC1MO120E0160
Part NoLSIC1MO120E0160
ManufacturerLittelfuse Inc.
DescriptionSICFET N-CH 1200V 22A TO247-3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C22A (Tc)
DriveVoltage(MaxRdsOn200mOhm @ 10A, 20V
MinRdsOn)4V @ 5mA
RdsOn(Max)@Id57 nC @ 20 V
Vgs+22V, -6V
Vgs(th)(Max)@Id870 pF @ 800 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds125W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-247AD
MountingTypeTO-247-3
SupplierDevicePackage20V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7114
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 13.7826 | |
| 10 | 13.5069 | |
| 100 | 13.0935 | |
| 1000 | 12.68 | |
| 10000 | 12.1287 |
Associated Product
