LSIC1MO120G0080
RoHS

LSIC1MO120G0080

Part NoLSIC1MO120G0080
ManufacturerLittelfuse
DescriptionMOSFET SIC 1200V 25A TO247-4L
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ECAD Module LSIC1MO120G0080
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C39A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)100mOhm @ 20A, 20V
RdsOn(Max)@Id4V @ 10mA
Vgs+22V, -6V
Vgs(th)(Max)@Id-
Vgs(Max)214W (Tc)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
FETFeatureThrough Hole
PowerDissipation(Max)TO-247-4L
OperatingTemperatureTO-247-4
MountingType92 nC @ 20 V
SupplierDevicePackage170 pF @ 800 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 3926
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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