Specification
MfrHarris Corporation
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25u00b0C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 75A, 10V
Vgs(th) (Max) @ Id3V @ 250u00b5A
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Vgs (Max)u00b116V
Input Capacitance (Ciss) (Max) @ Vds2100 pF @ 25 V
FET Feature-
Power Dissipation (Max)145W (Tc)
Operating Temperature-40u00b0C ~ 150u00b0C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (TO-263)
Package / CaseTO-263-3, Du00b2Pak (2 Leads + Tab), TO-263AB
In Stock:
6080
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.333 | |
| 10 | 1.307 | |
| 100 | 1.27 | |
| 1000 | 1.23 | |
| 10000 | 1.17 |
Associated Product
