Specification
MfrHarris Corporation
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50 V
Current - Continuous Drain (Id) @ 25u00b0C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Vgs (Max)u00b120V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 25 V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55u00b0C ~ 150u00b0C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
In Stock:
15468
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6165 | |
| 10 | 0.6042 | |
| 100 | 0.5857 | |
| 1000 | 0.5672 | |
| 10000 | 0.5426 |
Associated Product
