IRF521
Part NoIRF521
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C9.2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)270mOhm @ 5.6A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs15 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)350 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature60W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6567
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5146 | |
| 10 | 0.5043 | |
| 100 | 0.4889 | |
| 1000 | 0.4734 | |
| 10000 | 0.4528 |
Associated Product
