IRF541
RoHS

IRF541

Part NoIRF541
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
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ECAD Module IRF541
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Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C28A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)77mOhm @ 17A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs59 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1450 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature150W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 8071
Pricing
QTY UNIT PRICE EXT PRICE
1 1.264
10 1.2387
100 1.2008
1000 1.1629
10000 1.1123
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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