IRF542
Part NoIRF542
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
Datasheet
Download Now!
ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C25A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)100mOhm @ 17A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs59 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1450 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature150W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5413
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.792 | |
| 10 | 1.7562 | |
| 100 | 1.7024 | |
| 1000 | 1.6486 | |
| 10000 | 1.577 |
Associated Product
