IRF630
Part NoIRF630
ManufacturerHarris
DescriptionMOSFET N-CH 200V 9A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)400mOhm @ 5.4A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs43 nC @ 10 V
Vgs(th)(Max)@Id-
Vgs(Max)800 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-220AB
GateCharge(Qg)(Max)@VgsTO-220-3
Grade
Qualification
In Stock:
28846
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7395 | |
| 10 | 0.7247 | |
| 100 | 0.7025 | |
| 1000 | 0.6803 | |
| 10000 | 0.6508 |
Associated Product
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