IRF641
Part NoIRF641
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)150 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)180mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs64 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1275 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7212
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.5312 | |
| 10 | 1.5006 | |
| 100 | 1.4546 | |
| 1000 | 1.4087 | |
| 10000 | 1.3475 |
Associated Product
