IRF647

Part NoIRF647

ManufacturerHarris Corporation

DescriptionN-CHANNEL POWER MOSFET

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ECAD Module

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Specification

PackageBulk

Series-

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)275 V

Current-ContinuousDrain(Id)@25°C13A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)340mOhm @ 8A, 10V

RdsOn(Max)@Id4V @ 250µA

Vgs59 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)1300 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature125W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeTO-263 (D2PAK)

SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 4294
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