IRF820
Part NoIRF820
ManufacturerHarris
Description2.5A, 500V, 3.000 OHM, N-CHANNEL
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesPowerMESH™ II
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3Ohm @ 1.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs17 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)315 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature80W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220AB
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
23631
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.618 | |
| 10 | 0.6056 | |
| 100 | 0.5871 | |
| 1000 | 0.5686 | |
| 10000 | 0.5438 |
Associated Product
