IRFD311
RoHS

IRFD311

Part NoIRFD311
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
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ECAD Module IRFD311
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Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)350 V
Current-ContinuousDrain(Id)@25°C400mA (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.6Ohm @ 200mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs7.5 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)135 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingType4-DIP, Hexdip
SupplierDevicePackage4-DIP (0.300, 7.62mm)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 2620
Pricing
QTY UNIT PRICE EXT PRICE
1 1.08
10 1.0584
100 1.026
1000 0.9936
10000 0.9504
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product