IRFD323
Part NoIRFD323
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)350 V
Current-ContinuousDrain(Id)@25°C400mA (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.5Ohm @ 250mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs15 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)455 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingType4-DIP, Hexdip
SupplierDevicePackage4-DIP (0.300, 7.62mm)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3918
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.5352 | |
| 10 | 1.5045 | |
| 100 | 1.4584 | |
| 1000 | 1.4124 | |
| 10000 | 1.351 |
Associated Product
