IRFD9120
Part NoIRFD9120
ManufacturerHarris
DescriptionMOSFET P-CH 100V 1A 4DIP
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C1A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)600mOhm @ 600mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs18 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)390 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.3W (Ta)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/Case4-HVMDIP
GateCharge(Qg)(Max)@Vgs4-DIP (0.300, 7.62mm)
Grade
Qualification
In Stock:
23047
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.104 | |
| 10 | 1.0819 | |
| 100 | 1.0488 | |
| 1000 | 1.0157 | |
| 10000 | 0.9715 |
Associated Product
