IRFF211
Part NoIRFF211
ManufacturerHarris Corporation
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)150 V
Current-ContinuousDrain(Id)@25°C2.2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.5Ohm @ 1.25A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs7.5 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)135 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature15W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-205AF (TO-39)
SupplierDevicePackageTO-205AF Metal Can
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5122
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.986 | |
| 10 | 0.9663 | |
| 100 | 0.9367 | |
| 1000 | 0.9071 | |
| 10000 | 0.8677 |
Associated Product
