IRFP352
Part NoIRFP352
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)400 V
Current-ContinuousDrain(Id)@25°C14A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)400mOhm @ 8.9A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs130 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)2000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature180W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2554
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.3166 | |
| 10 | 2.2703 | |
| 100 | 2.2008 | |
| 1000 | 2.1313 | |
| 10000 | 2.0386 |
Associated Product
