IRFU9110
Part NoIRFU9110
ManufacturerHarris
Description3.1A 100V 1.200 OHM P-CHANNEL
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C3.1A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.2Ohm @ 1.9A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs8.7 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)200 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 25W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251AA
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15503
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3816 | |
| 10 | 0.374 | |
| 100 | 0.3625 | |
| 1000 | 0.3511 | |
| 10000 | 0.3358 |
Associated Product
