RF1S4N100SM9A
Part NoRF1S4N100SM9A
ManufacturerHarris Corporation
DescriptionMOSFET N-CH 1000V 4.3A TO263AB
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C4.3A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)3.5Ohm @ 2.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature150W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AB
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9503
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.2544 | |
| 10 | 3.1893 | |
| 100 | 3.0917 | |
| 1000 | 2.994 | |
| 10000 | 2.8639 |
Associated Product
