RF1S630SM
Part NoRF1S630SM
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)400mOhm @ 5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs30 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)600 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature75W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AB
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4444
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0712 | |
| 10 | 1.0498 | |
| 100 | 1.0176 | |
| 1000 | 0.9855 | |
| 10000 | 0.9427 |
Associated Product
