RF1S9530
Part NoRF1S9530
ManufacturerHarris
Description-12A, -100V, 0.3 OHM, P-CHANNEL
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)300mOhm @ 6.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs45 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature75W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262 (I2PAK)
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6255
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.0196 | |
| 10 | 1.9792 | |
| 100 | 1.9186 | |
| 1000 | 1.858 | |
| 10000 | 1.7772 |
Associated Product
