RFD20N03SM
Part NoRFD20N03SM
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)25mOhm @ 20A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs75 nC @ 20 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1150 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature90W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252 (DPAK)
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11778
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.43 | |
| 10 | 0.4214 | |
| 100 | 0.4085 | |
| 1000 | 0.3956 | |
| 10000 | 0.3784 |
Associated Product
