RFD4N06L
Part NoRFD4N06L
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn5V
MinRdsOn)600mOhm @ 1A, 5V
RdsOn(Max)@Id2.5V @ 250µA
Vgs8 nC @ 10 V
Vgs(th)(Max)@Id±10V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature30W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseI-Pak
GateCharge(Qg)(Max)@VgsTO-251-3 Short Leads, IPak, TO-251AA
Grade
Qualification
In Stock:
8250
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.312 | |
| 10 | 0.3058 | |
| 100 | 0.2964 | |
| 1000 | 0.287 | |
| 10000 | 0.2746 |
Associated Product
