RFD7N10LE
Part NoRFD7N10LE
ManufacturerHarris
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C7A (Tc)
DriveVoltage(MaxRdsOn300mOhm @ 7A, 5V
MinRdsOn)2V @ 250µA
RdsOn(Max)@Id150 nC @ 10 V
Vgs+10V, -8V
Vgs(th)(Max)@Id360 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds47W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-220-3
MountingTypeTO-220-3
SupplierDevicePackage5V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4895
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.415 | |
| 10 | 0.4067 | |
| 100 | 0.3942 | |
| 1000 | 0.3818 | |
| 10000 | 0.3652 |
Associated Product
