RFP10P12
Part NoRFP10P12
ManufacturerHarris
DescriptionP-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)120 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)500mOhm @ 5A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)1700 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature75W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3320
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0235 | |
| 10 | 1.003 | |
| 100 | 0.9723 | |
| 1000 | 0.9416 | |
| 10000 | 0.9007 |
Associated Product
