RFP2N12
Part NoRFP2N12
ManufacturerHarris
DescriptionN-CHANNEL, MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)120 V
Current-ContinuousDrain(Id)@25°C2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.75Ohm @ 2A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)200 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature25W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5594
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.552 | |
| 10 | 0.541 | |
| 100 | 0.5244 | |
| 1000 | 0.5078 | |
| 10000 | 0.4858 |
Associated Product
