RFP2P08
Part NoRFP2P08
ManufacturerHarris
DescriptionP-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)80 V
Current-ContinuousDrain(Id)@25°C2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.5Ohm @ 1A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs±20V
Vgs(th)(Max)@Id150 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds25W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-220-3
MountingTypeTO-220-3
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6368
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.297 | |
| 10 | 0.2911 | |
| 100 | 0.2822 | |
| 1000 | 0.2732 | |
| 10000 | 0.2614 |
Associated Product
