RFW2N06RLE
Part NoRFW2N06RLE
ManufacturerHarris Corporation
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C2A (Tc)
DriveVoltage(MaxRdsOn5V
MinRdsOn)200mOhm @ 2A, 5V
RdsOn(Max)@Id2V @ 250µA
Vgs30 nC @ 10 V
Vgs(th)(Max)@Id+10V, -5V
Vgs(Max)535 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.09W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingType4-DIP, Hexdip
SupplierDevicePackage4-DIP (0.300, 7.62mm)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7224
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.908 | |
| 10 | 1.8698 | |
| 100 | 1.8126 | |
| 1000 | 1.7554 | |
| 10000 | 1.679 |
Associated Product
