IPD16CNE8NG
RoHS

IPD16CNE8NG

Part NoIPD16CNE8NG
ManufacturerINFINEON
DescriptionPower Field-Effect Transistor, 53A I(D), 85V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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ECAD Module IPD16CNE8NG
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Specification
RoHSCompliant
MountSurface Mount
Fall Time7 ns
Rise Time14 ns
Rds On Max16 mΩ
Case/PackageTO-252-3
Input Capacitance3.23 nF
Power Dissipation100 W
Turn-Off Delay Time27 ns
Element ConfigurationSingle
Max Power Dissipation100 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance16 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)53 A
Drain to Source Voltage (Vdss)85 V
Drain to Source Breakdown Voltage85 V
In Stock: 12005
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Shipping Information
Shiped FromShenZhen Warehourse
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Associated Product