IPI65R600C6
RoHS

IPI65R600C6

Part NoIPI65R600C6
ManufacturerINFINEON
DescriptionPower Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Datasheet Download Now!
ECAD Module IPI65R600C6
Get Quotation Now!
Specification
RoHSCompliant
MountThrough Hole
Fall Time13 ns
Lead FreeLead Free
Rise Time9 ns
Rds On Max600 mΩ
Case/PackageTO-262-3
Halogen FreeHalogen Free
Lifecycle StatusObsolete (Last Updated: 2 years ago)
Package Quantity500
Input Capacitance440 pF
Power Dissipation63 W
Number of Elements1
Turn-On Delay Time12 ns
On-State Resistance600 mΩ
Turn-Off Delay Time80 ns
Max Power Dissipation63 W
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)7.3 A
Drain to Source Voltage (Vdss)650 V
In Stock: 15580
Pricing
QTY UNIT PRICE EXT PRICE
1 0.67
10 0.6566
100 0.6365
1000 0.6164
10000 0.5896
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product