SPI12N50C3
RoHS

SPI12N50C3

Part NoSPI12N50C3
ManufacturerINFINEON
DescriptionPower Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
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ECAD Module SPI12N50C3
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Specification
RoHSCompliant
MountThrough Hole
Width4.52 mm
Height9.45 mm
Length10.36 mm
Fall Time8 ns
Lead FreeLead Free
Rise Time8 ns
Rds On Max380 mΩ
Case/PackageTO-262-3
Halogen FreeHalogen Free
Current Rating11.6 A
Number of Pins3
Lifecycle StatusObsolete (Last Updated: 2 years ago)
Package Quantity500
Input Capacitance1.2 nF
Power Dissipation125 W
Number of Elements1
Turn-On Delay Time10 ns
On-State Resistance380 mΩ
Radiation HardeningNo
Turn-Off Delay Time45 ns
Voltage Rating (DC)560 V
Element ConfigurationSingle
Max Power Dissipation33 W
Max Dual Supply Voltage500 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance380 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)11.6 A
Drain to Source Voltage (Vdss)500 V
Drain to Source Breakdown Voltage500 V
In Stock: 7193
Pricing
QTY UNIT PRICE EXT PRICE
1 0.97
10 0.9506
100 0.9215
1000 0.8924
10000 0.8536
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product