IXFT4N100Q
Part NoIXFT4N100Q
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 4A TO-268
Datasheet
Download Now!
ECAD Module
Specification
Vgs(th) (Max) @ Id5V @ 1.5mA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-268
SeriesHiPerFET™
Rds On (Max) @ Id, Vgs3 Ohm @ 2A, 10V
Power Dissipation (Max)150W (Tc)
PackagingTube
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)1000V
Detailed DescriptionN-Channel 1000V 4A (Tc) 150W (Tc) Surface Mount TO-268
Current - Continuous Drain (Id) @ 25°C4A (Tc)
In Stock:
7548
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
