IXTQ200N085T
Part NoIXTQ200N085T
ManufacturerIXYS
DescriptionMOSFET N-CH 85V 200A TO-3P
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-3P
SeriesTrenchMV™
Rds On (Max) @ Id, Vgs5 mOhm @ 25A, 10V
Power Dissipation (Max)480W (Tc)
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds7600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs152nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)85V
Detailed DescriptionN-Channel 85V 200A (Tc) 480W (Tc) Through Hole TO-3P
Current - Continuous Drain (Id) @ 25°C200A (Tc)
In Stock:
6548
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