IXFX21N100F
Part NoIXFX21N100F
ManufacturerIXYS RF
DescriptionMOSFET N-CH 1000V 21A PLUS247-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id5.5V @ 4mA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePLUS247™-3
SeriesHiPerRF™
Rds On (Max) @ Id, Vgs500 mOhm @ 10.5A, 10V
Power Dissipation (Max)500W (Tc)
PackagingTube
Package / CaseTO-247-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time14 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds5500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)1000V
Detailed DescriptionN-Channel 1000V 21A (Tc) 500W (Tc) Through Hole PLUS247™-3
Current - Continuous Drain (Id) @ 25°C21A (Tc)
In Stock:
5729
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 23.76 | |
| 10 | 23.285 | |
| 100 | 22.57 | |
| 1000 | 21.86 | |
| 10000 | 20.91 |
Associated Product
