IXFA4N100P
Part NoIXFA4N100P
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 4A TO263
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.3Ohm @ 2A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id1456 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds150W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureTO-263AA (IXFA)
MountingTypeTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SupplierDevicePackage26 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6080
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.264 | |
| 10 | 3.1987 | |
| 100 | 3.1008 | |
| 1000 | 3.0029 | |
| 10000 | 2.8723 |
Associated Product
