IXFA5N100P
Part NoIXFA5N100P
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 5A TO263
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.8Ohm @ 2.5A, 10V
RdsOn(Max)@Id6V @ 250µA
Vgs±30V
Vgs(th)(Max)@Id-
Vgs(Max)250W (Tc)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
FETFeatureSurface Mount
PowerDissipation(Max)TO-263AA (IXFA)
OperatingTemperatureTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MountingType33.4 nC @ 10 V
SupplierDevicePackage1830 pF @ 25 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7559
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.0096 | |
| 10 | 3.9294 | |
| 100 | 3.8091 | |
| 1000 | 3.6888 | |
| 10000 | 3.5284 |
Associated Product
