IXFA7N100P
Part NoIXFA7N100P
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 7A TO263
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C7A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.9Ohm @ 3.5A, 10V
RdsOn(Max)@Id6V @ 1mA
Vgs47 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2590 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AA (IXFA)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11515
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.1996 | |
| 10 | 5.0956 | |
| 100 | 4.9396 | |
| 1000 | 4.7836 | |
| 10000 | 4.5756 |
Associated Product
