IXFJ20N85X
Part NoIXFJ20N85X
ManufacturerIXYS
DescriptionMOSFET N-CH 850V 9.5A ISO TO247
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Ultra X
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)850 V
Current-ContinuousDrain(Id)@25°C9.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)360mOhm @ 10A, 10V
RdsOn(Max)@Id5.5V @ 2.5mA
Vgs63 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1660 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature110W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeISO TO-247-3
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4800
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 8.69 | |
| 10 | 8.5162 | |
| 100 | 8.2555 | |
| 1000 | 7.9948 | |
| 10000 | 7.6472 |
Associated Product
