IXFN26N120P
Part NoIXFN26N120P
ManufacturerIXYS
DescriptionMOSFET N-CH 1200V 23A SOT-227B
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C23A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)460mOhm @ 13A, 10V
RdsOn(Max)@Id6.5V @ 1mA
Vgs225 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)14000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature695W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227B
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5569
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 51.2488 | |
| 10 | 50.2238 | |
| 100 | 48.6864 | |
| 1000 | 47.1489 | |
| 10000 | 45.0989 |
Associated Product
