IXFN30N110P
RoHS

IXFN30N110P

Part NoIXFN30N110P
ManufacturerIXYS
DescriptionMOSFET N-CH 1100V 25A SOT-227B
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ECAD Module IXFN30N110P
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Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1100 V
Current-ContinuousDrain(Id)@25°C25A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)360mOhm @ 15A, 10V
RdsOn(Max)@Id6.5V @ 1mA
Vgs235 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)13600 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature695W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227B
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 5810
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
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