IXFP12N65X2M
RoHS

IXFP12N65X2M

Part NoIXFP12N65X2M
ManufacturerIXYS
DescriptionMOSFET N-CH 650V 12A TO220
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ECAD Module IXFP12N65X2M
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Specification
PackageTube
SeriesHiPerFET™, Ultra X2
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)310mOhm @ 6A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs18.5 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1134 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature40W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220 Isolated Tab
SupplierDevicePackageTO-220-3 Full Pack, Isolated Tab
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 6799
Pricing
QTY UNIT PRICE EXT PRICE
1 4.0194
10 3.939
100 3.8184
1000 3.6978
10000 3.5371
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product