IXFP4N100PM
Part NoIXFP4N100PM
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 2.1A TO220
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C2.1A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3.3Ohm @ 2A, 10V
RdsOn(Max)@Id6V @ 250µA
Vgs26 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1456 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature40W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220 Isolated Tab
SupplierDevicePackageTO-220-3 Full Pack, Isolated Tab
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5447
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.4172 | |
| 10 | 4.3289 | |
| 100 | 4.1963 | |
| 1000 | 4.0638 | |
| 10000 | 3.8871 |
Associated Product
