IXFR200N10P
RoHS

IXFR200N10P

Part NoIXFR200N10P
ManufacturerIXYS
DescriptionMOSFET N-CH 100V 133A ISOPLUS247
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ECAD Module IXFR200N10P
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Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C133A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)9mOhm @ 100A, 10V
RdsOn(Max)@Id5V @ 8mA
Vgs235 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)7600 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseISOPLUS247™
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
Qualification
In Stock: 8519
Pricing
QTY UNIT PRICE EXT PRICE
1 18.4325
10 18.0639
100 17.5109
1000 16.9579
10000 16.2206
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product