IXFT10N100
Part NoIXFT10N100
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 10A TO268
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.2Ohm @ 5A, 10V
RdsOn(Max)@Id4.5V @ 4mA
Vgs155 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature300W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-268AA
SupplierDevicePackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
7208
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
