IXFT12N100Q

Part NoIXFT12N100Q

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 12A TO268

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Specification

PackageTube

SeriesHiPerFET™

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)1000 V

Current-ContinuousDrain(Id)@25°C12A (Tc)

DriveVoltage(MaxRdsOn10V

MinRdsOn)1.05Ohm @ 6A, 10V

RdsOn(Max)@Id5.5V @ 4mA

Vgs90 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)2900 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature300W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeTO-268AA

SupplierDevicePackageTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

In Stock: 5860
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