IXFX30N100Q2
Part NoIXFX30N100Q2
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 30A PLUS247-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Q2 Class
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C30A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)400mOhm @ 15A, 10V
RdsOn(Max)@Id5V @ 8mA
Vgs186 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)8200 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature735W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePLUS247™-3
SupplierDevicePackageTO-247-3 Variant
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
6382
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Associated Product
