IXFX32N100Q3
Part NoIXFX32N100Q3
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 32A PLUS247-3
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Q3 Class
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C32A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)320mOhm @ 16A, 10V
RdsOn(Max)@Id6.5V @ 8mA
Vgs195 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)9940 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1250W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePLUS247™-3
SupplierDevicePackageTO-247-3 Variant
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5846
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 35.0028 | |
| 10 | 34.3027 | |
| 100 | 33.2527 | |
| 1000 | 32.2026 | |
| 10000 | 30.8025 |
Associated Product
