IXTA1N120P
Part NoIXTA1N120P
ManufacturerIXYS
DescriptionMOSFET N-CH 1200V 1A TO263
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C1A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)20Ohm @ 500mA, 10V
RdsOn(Max)@Id4.5V @ 50µA
Vgs17.6 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)550 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature63W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AA
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
8635
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.641 | |
| 10 | 4.5482 | |
| 100 | 4.4089 | |
| 1000 | 4.2697 | |
| 10000 | 4.0841 |
Associated Product
